TK5A45DA Datasheet, Toshiba Semiconductor

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VD.

* Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ.) .